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| Ordering number : ENA0104 VEC2610 VEC2610 Features * * N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications * * The best suited for inverter applications. The VEC2610 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. Mounting height 0.75mm. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 20 10 4.5 18 0.9 1.0 150 --55 to +150 P-channel -20 10 --3 -12 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2A, VGS=4V ID=1A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 20 1 10 0.5 4.5 7.5 32 40 55 570 110 80 42 57 80 1.3 V A A V S m m m pF pF pF Symbol Conditions Ratings min typ max Unit Marking : CG Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0505PE MS IM TB-00001385 No. A0104-1/6 VEC2610 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=8V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1.5A ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.3A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0V --0.4 2.9 4.9 62 87 145 680 115 80 13 53 77 62 8.2 1.7 2.1 --0.88 --1.2 81 120 205 --20 --1 10 --1.3 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=4.5A VDS=10V, VGS=4V, ID=4.5A VDS=10V, VGS=4V, ID=4.5A IS=4.5A, VGS=0V Ratings min typ 15 105 50 52 7.6 1.2 2.1 0.85 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7012-002 0.25 Electrical Connection 8 0.15 7 6 5 0.3 8 7 65 0.25 1 2 2.9 3 0.65 4 1 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 2 3 4 2.8 2.3 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 0.07 No. A0104-2/6 VEC2610 Switching Time Test Circuit [N-channel] VIN 4V 0V VIN ID=2.5A RL=4 VOUT VDD=10V 0V --4.5V VIN ID= --1.5A RL=6.67 VOUT [P-channel] VIN VDD= --10V D PW=10s D.C.1% D PW=10s D.C.1% G VEC2610 P.G 50 G S P.G 50 VEC2610 S --3. 0 --2 V .5V 4.5 ID -- VDS 2.5V [Nch] --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 ID -- VDS --3. 5 [Pch] 1.8 4.0 3.5 5.0V V --2.0V Drain Current, ID -- A VGS=1.5V 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT10209 8.0V --4.5 V 3.0 Drain Current, ID -- A 6.0V 4.0V --4.0 V V VGS= --1.5V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 9 8 7 Drain-to-Source Voltage, VDS -- V --7 IT06416 ID -- VGS [Nch] VDS=10V ID -- VGS VDS= --10V [Pch] --6 Drain Current, ID -- A Drain Current, ID -- A --5 6 5 4 --4 Ta= 7 --2 --25 C 25 2 1 0 0 0.5 1.0 1.5 2.0 2.5 IT10210 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 25 C --1.6 --1.8 --1 Ta =7 --25 C C 5 C 3 5C --3 --2.0 Gate-to-Source Voltage, VGS -- V 100 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 160 IT06417 [Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 120 100 80 60 40 20 0 RDS(on) -- VGS [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 90 ID=2A 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 IT10211 0.3A 1A ID= --1A --2A 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V IT06418 No. A0104-3/6 VEC2610 90 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 80 70 60 50 40 30 20 10 --60 120 0.3 I D= A =1.8 , VGS V 100 --1A I D= -S= , VG 2.5 V 2.5V S= A, VG 1.0 I D= =4.0V , VGS =2.0A ID 80 --2 I D= 60 --4 S= A, VG .5V 40 --40 --20 0 20 40 60 80 100 120 140 160 20 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 10 yfs -- ID IT10212 Ambient Temperature, Ta -- C 3 IT06419 [Nch] Forward Transfer Admittance, yfs -- S 2 yfs -- ID [Pch] VDS= --10V Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V Ta -2 =- C 5 75 10 7 5 3 2 C 1.0 7 5 3 2 C 25 --25 Ta= C 75 C C 25 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT06420 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.4 0.6 0.8 1.0 5 7 1.0 IT10213 IS -- VSD Drain Current, ID -- A --10 7 5 3 2 [Nch] VGS=0V IS -- VSD [Pch] VGS=0V Source Current, IS -- A Source Current, IS -- A 5C 25 C --25 C Ta= 7 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 1.2 IT10214 --0.001 --0.2 Diode Forward Voltage, VSD -- V 5 3 SW Time -- ID Diode Forward Voltage, VSD -- V 5 3 5C 25 C --25 C Ta= 7 --1.0 7 5 3 2 IT06421 [Nch] SW Time -- ID [Pch] VDD= --10V VGS= --4.5V VDD=10V VGS=4V Switching Time, SW Time -- ns Switching Time, SW Time -- ns 2 2 100 7 5 3 2 100 7 5 3 2 td(off) tf td(off) tf tr td(on) tr td(on) 10 7 5 --0.1 10 7 0.1 2 3 5 7 1.0 2 3 5 7 2 3 5 7 --1.0 2 3 5 7 Drain Current, ID -- A IT09309 Drain Current, ID -- A IT06422 No. A0104-4/6 VEC2610 2 Ciss, Coss, Crss -- VDS [Nch] f=1MHz 2 Ciss, Coss, Crss -- VDS [Pch] f=1MHz 1000 1000 Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- pF 7 Ciss 7 5 3 2 Ciss Coss 100 7 5 3 0 5 10 15 20 IT08607 Coss 100 7 5 3 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Crss Crss Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 Drain-to-Source Voltage, VDS -- V --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 IT06423 VGS -- Qg [Nch] VDS= --10V ID= --3A VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V 8 IT08609 Gate-to-Source Voltage, VGS -- V VDS=10V ID=4.5A 0 2 4 6 8 10 IT06424 Total Gate Charge, Qg -- nC 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Total Gate Charge, Qg -- nC ASO IDP=18A [Nch] 10s 3 2 --10 7 5 ASO IDP= --12A ID= --3A 10 [Pch] 10s 1m s ms 1m ID=4.5A 10 s Drain Current, ID -- A Drain Current, ID -- A DC 10 ms 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0m 10 op s DC 0m s era op tio era n tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 23 Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.01 0.01 --0.01 --0.01 1.2 Drain-to-Source Voltage, VDS -- V IT10215 PD -- Ta [Nch / Pch] Mounted on a ceramic board (900mm2!0.8mm) Drain-to-Source Voltage, VDS -- V 5 7 --10 23 IT10216 Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 To t 0.6 al Di 1u 0.4 ss ip ni t ati on 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10217 No. A0104-5/6 VEC2610 Note on usage : Since the VEC2610 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2005. Specifications and information herein are subject to change without notice. PS No. A0104-6/6 |
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